Ta doped tungsten oxide nano film can be prepared by a dual target co-sputtering method using a metal tungsten target and a Ta2O5 target. Specifically, how to prepare a Ta-doped tungsten oxide nanofilm?
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Preparation of Ta Doping Tungsten Oxide Nano Film
The metal W target was sputtered with a DC power source, and the Ta2O5 target was sputtered with a radio frequency power source. The substrate was ITO conductive glass (sheet resistance of 10-15 Ω, Tvis>80%) and a silicon wafer. Before the gas is introduced, the deposition chamber is pre-vacuumed to below 3x10-4PA, then high-purity argon is used as the working gas, and high-purity oxygen is used as the reaction gas, pre-sputtering at room temperature for 20min. After the experimental parameters were substantially stabilized, the baffle was opened for sputter coating. Different Ta doping content of Ta doping tungsten oxide films were prepared by adjusting deposition parameters such as gas flow rate, sputtering power and sputtering time during sputtering, and to ensure uniform film thickness.
