WO3, a n-type oxide semiconductor, is regarded as the best sensing material for fabrication of H2S gas sensor to realize the monitoring and detection of H2S gas. You know, H2S gas is an air pollutant, which not only seriously threatens human health, but also affects industrial production. In industry, the maximum allowable mass concentration of H2S in air is 0.01 mg/L. So, there is an urgent need to develop a H2S gas component.
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WO3-based H2S gas sensor was developed under this background. In recent years, studies have shown that WO3 nanoparticles and WO3 nanosheets have good sensitivity to 1-1000 ppm H2S gas in the range of 40-250 °C. It is also pointed out in the literature that the sensitivity of the WO3 sensitive film to H2S gas on the order of ppm, the response time varies from 3s to 14^4s depending on the test temperature and the concentration of H2S gas.
