Tungsten oxide powder, which may be applied in the production of ceramic microsphere, is a photocatalyst. However, its photocatalytic activity is not very high, so it is necessary to increase its photocatalytic activity by means of semiconductor recombination or element doping. The semiconductor composite means that a tungsten oxide composite photocatalyst can be obtained.
There are many photocarrier separation processes for composite photocatalysts, but the main one is the migration of photogenerated carriers between the two semiconductors. In this way, according to the difference of the two semiconductor energy band structures, it can be divided into several different migration paths. However, in general, there is a common feature that photogenerated electrons with higher reducing ability migrate to another semiconductor with relatively weak reducing ability under the electric field gradient generated by different energy band positions. The same as photogenerated holes, which migrate from a valence band of the semiconductor with higher oxidizing ability to semiconductor with relatively weak oxidizing ability. Effective photo-generated carrier separation will greatly enhance the photocatalytic performance of the composite photocatalyst without impairing the redox reaction that can occur.
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